Lv3
360 积分 2022-04-20 加入
Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV
9小时前
已完结
Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
9小时前
已完结
Asymmetric Trench SiC MOSFET With Integrated Channel Accumulation Diode for Enhanced Reverse Conduction and Switching Characteristics
9小时前
已完结
The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing
9小时前
已完结
Effects of ion channelling on 350 keV proton implantation of 4H-SiC measured by D-SIMS and DLTS defect profiling
9小时前
已完结
Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
4个月前
已完结
Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors
4个月前
已完结
Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and
4个月前
已完结
A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement
5个月前
已完结
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
5个月前
已完结
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