Lv3
220 积分 2022-04-20 加入
Superior Short-Circuit Performance of SiC Superjunction MOSFET
5天前
已完结
Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET
5天前
已完结
A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance
4个月前
已完结
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing
5个月前
已完结
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
5个月前
已完结
Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO<sub>2</sub>
5个月前
已完结
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
5个月前
已完结
Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
5个月前
已完结
Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching
5个月前
已关闭
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