Lv5
820 积分 2023-10-12 加入
Dislocation analysis in p-type 4H-SiC: Etching morphologies and electronic properties
5小时前
已完结
Effect of nitrogen doping concentration on 4H‐SiC laser slicing
11天前
已完结
Stacking faults in 4H–SiC epilayers and IGBTs
18天前
已完结
Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
3个月前
已完结
Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
3个月前
已完结
Paving the way toward the world's first 200mm SiC pilot line
3个月前
已完结
Exploration of the transverse seebeck effect in the inclined nitrogen-doped 4H-SiC thin film
4个月前
已完结
Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 <i>g</i>-Vectors and a Comparison to Etch Pit Evaluation
5个月前
已完结
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