Lv2
148 积分 2024-09-07 加入
Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC
2个月前
已关闭
Improved Ni/SiC Schottky diode formation
2个月前
已完结
4H-SiC基底Al2O3/SiO2双层减反射膜的设计和制备
2个月前
已完结
Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC
3个月前
已完结
Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC
10个月前
已完结
Silicon carbide on insulator formation using the Smart Cut process
11个月前
已完结
Silicon carbide on insulator formation by the Smart-Cut® process
11个月前
已完结
XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
11个月前
已完结
Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode
11个月前
已完结
皖公网安备34019202002308
