Lv11
92 积分 2023-04-03 加入
Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEMT
1小时前
求助中
Fast prediction of electromigration lifetime with modified mean-time-to-failure equation
6天前
已完结
Investigations of CMOS-Compatible 1200 V E-Mode p-GaN Gate HEMTs on 8-Inch Si Substrate with Thick (>8 μm) Epitaxial Layer
14天前
已关闭
Record-Low R ON,SP and R ON ×Q G in Regrowth-Free Low-Voltage p-GaN Gate HEMTs on 200-mm GaN-on-Si Platform
14天前
已完结
Monolithic Integration of an Embedded Voltage Regulator in p-GaN Gate HEMTs for High Threshold Voltage and Wide Gate Swing
1个月前
已完结
High-temperature integrated SiC MOSFET bi-directional switch in power-overlay technology
1个月前
已完结
Polyamide-Based Cu Redistribution Layers for the Implementation of GaN Power Converters on Silicon Interposers
1个月前
已完结
450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV•cm 2 /mg
1个月前
已完结
Investigation of Field Plate Design and Gate Control Strategies for Monolithic Bidirectional GaN HEMTs in Vienna Rectifier Applications
1个月前
已完结
Impact of Integrated Substrate Potential Control (SPC) Circuits and Dual Field-Plates on Dynamic ON-Resistance in GaN Monolithic Bidirectional Switches
1个月前
已完结
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