Lv42
454 积分 2023-04-03 加入
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs
8小时前
已完结
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase
8小时前
已完结
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout
1天前
已完结
Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design
1天前
已完结
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
1天前
已完结
Suppression of Drain-Bias-Induced $\textit{V}_{\text{TH}}$ Instability in Schottky-Type p-GaN Gate HEMTs With Voltage Seatbelt
22天前
已完结
Split-p-GaN Gate HEMT with Suppressed Negative V th Shift and Enhanced Robustness against False Turn-On
22天前
已完结
All-GaN HEMTs and Planar Transformer Based 48V Voltage Regulator Common Module (VRCM) Design
1个月前
已完结
Prediction of overshoot and crosstalk of low‐voltage GaN HEMT using analytical model
1个月前
已完结
Impact of ${V_{\mathsf {th}}}$ Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
1个月前
已完结
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