Lv4
770 积分 2024-10-10 加入
High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact
1个月前
已完结
Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor
2个月前
已完结
Charge noise in low Schottky barrier multilayer tellurium field-effect transistors
2个月前
已完结
Thermally Crosslinked Polyvinyl Alcohol (PVA) Layers for the Passivation of Pentacene Thin-Film Transistors
2个月前
已完结
High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth
2个月前
已完结
Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator
4个月前
已完结
Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals
5个月前
已完结
Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
5个月前
已完结
High‐Performance Flexible MoS2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes
5个月前
已完结
High-tone bulk acoustic resonators on sapphire, crystal quartz, fused silica, and silicon substrates
5个月前
已完结
皖公网安备34019202002308
