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170 积分 2025-08-09 加入
Electrostatic Discharge Characteristics of InGaN/GaN Light-Emitting Diodes with Si-Doped Graded Superlattice
11天前
已完结
Some effects of oxygen impurities on AlN and GaN
15天前
已完结
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
15天前
已关闭
Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique
24天前
已完结
Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire
24天前
已完结
Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition
24天前
已完结
Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD
24天前
已完结
Development of Sandwich AlN on PSS via Layered V/III Ratio Optimization
24天前
已关闭
Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape
25天前
已完结
Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
1个月前
已完结
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