Lv2
160 积分 2024-07-07 加入
First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles
16小时前
已完结
Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions
15天前
已完结
Mobility–stability trade-off in oxide thin-film transistors
25天前
已完结
van der Waals Lamination for Effective Bottom Channel Modulation of Oxide Transistors
1个月前
已关闭
Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment
6个月前
已完结
Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
7个月前
已完结
Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
7个月前
已完结
High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes
8个月前
已完结
Solution-processed IGZO field-effect transistors with a three-step laser annealing process
10个月前
已完结
皖公网安备34019202002308
