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74 积分 2024-07-20 加入
Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
1个月前
已完结
3D-simulation design of a high current capacity GaN tri-gate power device with integrated parasitic bipolar junction
1个月前
已完结
Comparative Performance Evaluation for Bidirectional 1.2–10 kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors
1个月前
已完结
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer
1个月前
已完结
1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
1个月前
已完结
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation
4个月前
已完结
Current Apertured Vertical Electron Transistor (CAVET)
4个月前
已关闭
High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
4个月前
已完结
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
4个月前
已完结
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
4个月前
已完结
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