Lv11
64 积分 2024-07-20 加入
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer
2小时前
已完结
1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
2小时前
已完结
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation
2个月前
已完结
Current Apertured Vertical Electron Transistor (CAVET)
2个月前
已关闭
High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
2个月前
已完结
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
2个月前
已完结
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
2个月前
已完结
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2个月前
已完结
First principles study of wurtzite and zinc blende GaN: a comparison of the electronic and optical properties
2个月前
已完结
AlGaN/GaN HEMTs-an overview of device operation and applications
2个月前
已完结
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