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54 积分 2024-07-20 加入
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation
12天前
已完结
Current Apertured Vertical Electron Transistor (CAVET)
13天前
已关闭
High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
13天前
已完结
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
15天前
已完结
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
17天前
已完结
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
18天前
已完结
First principles study of wurtzite and zinc blende GaN: a comparison of the electronic and optical properties
18天前
已完结
AlGaN/GaN HEMTs-an overview of device operation and applications
18天前
已完结
Superjunction Power Devices, History, Development, and Future Prospects
19天前
已完结
Next-Generation Superjunction Power Device with Trench Sidewall Doping
20天前
已完结
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