Lv11
40 积分 2026-10-09 加入
Development and characterization of high-quality 150 mm p-type 4H-SiC substrates using solution growth
10小时前
已完结
HTRB failure mechanism of 1200 V SiC MOSFET induced by abnormal electric field distribution in FLR termination
11小时前
已完结
Investigation of Photoluminescence Black Features in 4H‐SiC Substrates
11小时前
已完结