Lv11
42 积分 2025-10-16 加入
Logical integration device for two-dimensional semiconductor transition metal sulfide
1小时前
已完结
Optical thin films with high reflectance, low thickness and low stress for the spectral range from vacuum UV to near IR
21天前
已完结
Improving the optoelectronic properties of monolayer MoS2 field effect transistor through dielectric engineering
1个月前
已完结
Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effect*
1个月前
已完结
2D Material-Based Field Effect Transistors (FETs)
1个月前
已完结
Performance enhancement of monolayer MoS 2 transistors by atomic layer deposition of high- k dielectric assisted by Al 2 O 3 seed layer
1个月前
已完结
Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T′-MoTe2
1个月前
已完结
2D Material-Based Field Effect Transistors (FETs)
1个月前
已完结
All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths
1个月前
已完结
Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs
2个月前
已完结
皖公网安备34019202002308
