Lv41
470 积分 2026-01-12 加入
ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics
1小时前
待确认
Dual Effect of Defect-Free AlO x F y Layer for Suppressing Hydrogen Influence in Indium–Gallium–Zinc Oxide Thin-Film Transistors
1小时前
已完结
Deep Neural Networks for Determining Subgap States of Oxide Thin-Film Transistors
2小时前
已完结
AI-Based General Solution for Automated TCAD Parameter Calibration: Case Studies on TFT Devices
2小时前
已完结
Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization
9天前
已完结
Thermal atomic layer etching mechanism of amorphous aluminum oxide by hydrogen fluoride and trimethylaluminum: First-principles study
26天前
已完结
Effect of crystalline phase on the thermal atomic layer etching of aluminum oxide: a first-principles study
26天前
已完结
Atomic layer etching of Al2O3 with NF3 plasma fluorination and trimethylaluminum ligand exchange
26天前
已完结
Characteristics of Silicon Oxide Thin Film Deposited via Remote Plasma Atomic Layer Deposition
1个月前
已完结
皖公网安备34019202002308
