Lv2
130 积分 2023-02-21 加入
Epitaxial growth of highly stacked SiGe(:B)/Si multilayers without strain relaxation for vertically stacked device applications
1个月前
已完结
Effect of HCl on the SiGe growth kinetics in reduced pressure—chemical vapor deposition
1个月前
已完结
Effects of Ge and B Concentration in Selective Epitaxial Growth of Si1-XGex(:B) at Low-Temperature
1个月前
已关闭
Study on the interfaces between Si and SiGe in the epitaxial in-situ Boron-Doped SiGe/Si layers treated with H or Cl
1个月前
已完结
Growth and characterization of SiGe/Si superlattice for vertically stacked DRAM
2个月前
已完结
Influence of Si Buffer Layer on the Crystal Quality of SiGe Films in Ge/Si/SiGe Heterostructures: A Molecular Dynamics Investigation
2个月前
已完结
Growth of high Ge content SiGe on (110) oriented Si wafers
4个月前
已完结
Effects of source material on epitaxial growth of fluorescent SiC
4个月前
已完结
High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
4个月前
已完结
Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices
4个月前
已完结