Lv2
110 积分 2023-02-21 加入
Growth of high Ge content SiGe on (110) oriented Si wafers
1个月前
已完结
Effects of source material on epitaxial growth of fluorescent SiC
1个月前
已完结
High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
2个月前
已完结
Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices
2个月前
已完结
A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs
2个月前
已完结
Investigation of Low Temperature SiP Epitaxy on 300 mm Si Substrate
2个月前
已关闭
Phosphorus Atomic Layer Doping in Si Using PH3
2个月前
已完结
Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics
2个月前
已完结
(Invited) Activation and Deactivation in Ultra-Highly Doped n-Type Epitaxy for nMOS Applications
2个月前
已完结
Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition
2个月前
已完结
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