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484 积分 2025-12-10 加入
Mitigating Polarization Field and Enhancing Carrier Overlap in Relaxed AlGaN Quantum Wells for >12% Efficient UVB LEDs
4小时前
已完结
Advantages of AlGaN-based 275-nm deep-ultraviolet LEDs with a tapered N-shaped aluminum-composition graded electron blocking layer
4小时前
待确认
Enhancement of doping efficiency via polarization engineering in nitrogen-polar graded AlGaN grown by plasma-assisted molecular beam epitaxy
4小时前
已关闭
Design and Realization of GaN-Based Trench-Gate MOSFETs Based on Graded Al-Composition AlGaN Channel Layer
4小时前
已完结
Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement
4小时前
已关闭
Effect of polarization Coulomb field scattering on GaN devices
4小时前
已完结
Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p‐AlGaN‐Layers
1天前
已完结
Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode
1天前
已完结
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates
1天前
已完结
High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization
1天前
已完结
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