Lv4
518 积分 2025-12-10 加入
Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p‐AlGaN‐Layers
1天前
已完结
Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode
1天前
已完结
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates
1天前
已完结
High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization
1天前
已完结
High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
1天前
已完结
Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
1天前
已完结
High p-conductivity in AlGaN enabled by polarization field engineering
1天前
已完结
MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases
1天前
已完结
Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template
1天前
已完结
Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting
1天前
已完结
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