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肖特基C-V法研究AlxGa1-xN/GaN异质结界面二维电子气
1个月前
已关闭
High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
1个月前
已完结
analysis of leakage current mechanisms in schottky contacts to gan and al0.25ga0.75n/gan grown by molecular-beam epitaxy
2个月前
已完结
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