Lv710
3240 积分 2024-11-26 加入
Dependence of the V/III Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy
8个月前
已完结
High output InGaN red laser diodes through implementation of AlGaInN interlayer
11个月前
已完结
Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template
11个月前
已完结
皖公网安备34019202002308
