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40 积分 2025-11-13 加入
Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications
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Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices
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