Lv4
458 积分 2023-05-07 加入
High-Performance p-Type SnO Thin-Film Transistors With Superior Bias Stress Stability via Fluorine Plasma Treatment
8天前
已完结
First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff <-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C
5个月前
已关闭
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application
5个月前
已完结
First Demonstration of Atomic-Layer-Deposited BEOL-Compatible In2O3 3D Fin Transistors and Integrated Circuits: High Mobility of 113 cm2/V•s, Maximum Drain Current of 2.5 mA/μm and Maximum Voltage Gain of 38 V/V in In2O3 Inverter
5个月前
已关闭
First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm
5个月前
已关闭
Tunnel field effect transistor device structures: A comprehensive review
5个月前
已完结
Fundamentals of Tunnel Field-Effect Transistors
5个月前
已完结
Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors
6个月前
已完结
Effects of defects and dopants on p -type selenium-doped amorphous tellurium oxide: Electronic structure and transistor performance from multiscale modeling
6个月前
已完结
Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors
7个月前
已完结
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