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130 积分 2024-07-30 加入
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
8小时前
待确认
Gate Length Influence on the Strain of the AlGaN Barrier Layer under the Gate in AlGaN/AlN/GaN HFETs at Different Temperatures
2个月前
已完结
Temperature-induced degradation of GaN HEMT: An in situ heating study
2个月前
已完结
Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer
4个月前
已完结
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