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444 积分 2026-04-10 加入
On the Lamellar Compounds CuBiP2Se6, AgBiP2Se6 and AgBiP2S6. Antiferroelectric Phase Transitions Due to Cooperative Cu+ and Bi3+ Ion Motion
1个月前
已完结
Exploration of Quasi‐Direct Band Edge in a Multilayer Ferroelectric Semiconductor for Applications in Van Der Waals Stacked Heterojunction Solar Cell and Photocatalytic Devices
1个月前
已完结
Synthesis, atomic structure and electronic properties of ferroelectric AgBiP2Se6 ultrathin flakes
1个月前
已完结
Exploration of Quasi‐Direct Band Edge in a Multilayer Ferroelectric Semiconductor for Applications in Van Der Waals Stacked Heterojunction Solar Cell and Photocatalytic Devices
1个月前
已完结
A two-dimensional optoelectronic material AgBiP2Se6/MoSe2 heterostructure with excellent carrier transport efficiency
1个月前
已完结
Strain engineering to facilitate the occurrence of 2D ferroelectricity in CuInP 2 S 6 monolayer
1个月前
已完结
Interface engineering of ferroelectricity in thin films of thiophosphate ABP2X6(A=Cu,Ag;B=In,Bi,Cr,V;X=S,Se)
1个月前
已关闭
Interface engineering of ferroelectricity in thin films of thiophosphate ABP2X6(A=Cu,Ag;B=In,Bi,Cr,V;X=S,Se)
1个月前
已完结
Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices
1个月前
已完结
A two-dimensional optoelectronic material AgBiP2Se6/MoSe2 heterostructure with excellent carrier transport efficiency
1个月前
已完结
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