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1510 积分 2023-06-26 加入
Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices
1个月前
已完结
Development of SiC Superjunction MOSFET: A Review
1个月前
已完结
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
1个月前
已完结
Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation
1个月前
已完结
Investigating Local Residual Stress and Dopant Homogeneity in 4H-SiC MOSFETs: A Failure Analysis Approach
1个月前
已完结
Reducing surface pits of thick 4H-SiC epilayers by in-situ post-treatment process
2个月前
已完结
An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction
3个月前
已完结
Geometric-contrast-driven threading dislocations identification in 4H-SiC via synergistic micro-etching and X-ray topography
4个月前
已完结
Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness
4个月前
已完结
Distribution of the electrical resistivity of a n-type 4H-SiC crystal
4个月前
已完结
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