Lv5
1470 积分 2023-06-26 加入
Geometric-contrast-driven threading dislocations identification in 4H-SiC via synergistic micro-etching and X-ray topography
1个月前
已完结
Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness
1个月前
已完结
Distribution of the electrical resistivity of a n-type 4H-SiC crystal
1个月前
已完结
Geometric-contrast-driven threading dislocations identification in 4H-SiC via synergistic micro-etching and X-ray topography
1个月前
已关闭
Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review
1个月前
已完结
Fabrication and Optimization of 1550 V Semi-Superjunction MOSFET with Ultra-Low Specific On-Resistance and Enhanced Switching Performance
3个月前
已完结
Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy
3个月前
已完结
Deformation of 4H-SiC: The role of dopants
3个月前
已完结
Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits
3个月前
已完结
Influence of nitrogen doping concentration on mechanical properties of 4H-SiC: A comparative study of C and Si faces
3个月前
已完结
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