Lv5
1540 积分 2023-06-26 加入
Characterization Of Gallium Oxide With A Novel Non-Contact Electrical Metrology, CnCV, For Wide Bandgap Semiconductors
5天前
已完结
The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H‐SiC Devices
6天前
已完结
Close space physical vapor transport growth of SiC, doped layers and thin crystals
1个月前
已完结
Advances in SiC growth mechanisms and defects control strategies enhanced by machine learning perspective
1个月前
已完结
Advances in intelligent epitaxy of semiconductor materials
1个月前
已完结
Characterization and analysis of high-quality 4H-SiC epitaxy suitable for the super-junction adopting “multiple epitaxy-channeling implantation” route
1个月前
已完结
Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices
2个月前
已完结
Development of SiC Superjunction MOSFET: A Review
3个月前
已完结
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
3个月前
已完结
Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation
3个月前
已完结
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