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80 积分 2023-07-17 加入
Ohmic contacts to Gallium Nitride materials
17小时前
待确认
Mass-balance and locality versus accuracy with the new boundary and interface-conjugate approaches in advection-diffusion lattice Boltzmann method
2个月前
已完结
High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology
2个月前
已关闭
Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures
9个月前
已完结
Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study
9个月前
已完结
Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions
11个月前
已完结
Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors
11个月前
已完结
Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates
11个月前
已完结
综合营养干预对阿勒泰农牧区哈萨克族孕妇、乳母和婴幼儿营养改善的效果
1年前
已采纳
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