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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
1年前
已完结
Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content
1年前
已完结
Effects of a 50 nm AlN intermediate layer on the properties of Al Sc N films with varying Sc concentrations
1年前
已完结
Stress effect on the leakage current distribution of ferroelectric Al0.7Sc0.3N across the wafer
1年前
已完结
Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering
1年前
已完结
Thickness dependence of Al0.88Sc0.12N thin films grown on silicon
1年前
已关闭
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
1年前
已完结
A scalable ferroelectric non-volatile memory operating at 600 °C
1年前
已完结
Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
1年前
已关闭
Activation field-driven domain wall dynamics of nanobits in ferroelectric Al0.7Sc0.3N thin films
1年前
已关闭
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