Lv11
58 积分 2026-03-21 加入
Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials
10天前
已完结
Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride
11天前
已完结
High-mobility p-type semiconducting two-dimensional β-TeO2
19天前
已完结
The electronic structure of β-TeO2 as wide bandgap p-type oxide semiconductor
23天前
已完结
Synthesis of Tellurium Dioxide Nanoparticles by Spray Pyrolysis
24天前
已完结
Centimeter-Scale Tellurium Oxide Films for Artificial Optoelectronic Synapses with Broadband Responsiveness and Mechanical Flexibility
1个月前
已完结
High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions
1个月前
已完结
High-performance optoelectronic devices based on p-type selenium-alloyed tellurium oxide semiconductors
1个月前
已完结
Controlled growth of asymmetric chiral TeOx for broad-spectrum, high-responsivity and polarization-sensitive photodetection
1个月前
已完结
Mechanical exfoliation of non-layered metal oxides into ultrathin flakes
4个月前
已完结
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