Lv11
36 积分 2024-07-13 加入
20 nm polysilicon gate patterning and application in 36 nm complementary metal–oxide–semiconductor devices
3小时前
待确认
Profile evolution during polysilicon gate etching with low-pressure high-density Cl2/HBr/O2 plasma chemistries
3小时前
已完结
Boosting faradaic efficiency of CO2 electroreduction to CO for Fe−N−C single-site catalysts by stabilizing Fe3+ sites via F-doping
3个月前
已完结
Atomic‐Level Surface Engineering of Nickel Phosphide Nanoarrays for Efficient Electrocatalytic Water Splitting at Large Current Density
4个月前
已完结
Fluoridated Iron–Nickel Layered Double Hydroxide for Enhanced Performance in the Oxygen Evolution Reaction
11个月前
已完结
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