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268 积分 2024-08-04 加入
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
9天前
已完结
p-Type 2D transistors from contact physics to complementary integration
10天前
已完结
Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect Transistors
20天前
已完结
Enhancing Hole Mobility in Monolayer WSe2 p-Type Field-Effect Transistors via Process-Induced Compression
23天前
已完结
WSe2/GeSe heterojunction photodiode with giant gate tunability
1个月前
已完结
High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts
1个月前
已完结
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
1个月前
已完结
Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes
1个月前
已完结
Ultrathin Amorphous p-Type Tellurium Oxide Films Enabled by Cryogenic Deposition
1个月前
已完结
Ultralow P-Type Contact Resistance Enabled by Evaporated SnS Contacts
1个月前
已完结
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