Lv4
449 积分 2020-12-07 加入
Fröhlich Scattering Effects on Electron Mobility in β‐Ga2O3 Power Devices under High Temperature
7天前
已完结
Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes
7天前
已完结
Laser-Induced Single-Event Burnout in GaN Devices
8天前
已完结
Comparative Analysis of Carrier Extraction Related Failure Mechanisms in P-GaN HEMTs Under Single-Event Burnouts
8天前
已完结
Single-event burnout mechanism in β -Ga2O3 Schottky barrier diodes
9天前
已完结
Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse
5个月前
已完结
Investigation of single-event effects induced by heavy ion irradiation on GaN MMIC power amplifiers
5个月前
已关闭
Investigation of single-event effects induced by heavy ion irradiation on GaN MMIC power amplifiers
5个月前
已关闭
Effect of graphene on the surface nanomechanical behavior and subsurface layer of GaN damage during nanogrinding using molecular dynamics simulation
7个月前
已完结
GaN MOSHEMTs and MISHEMTs: A comprehensive review of device physics, materials innovation, and technological pathways in power and RF electronics
7个月前
已完结
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