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10 积分 2025-12-11 加入
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
13天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
13天前
已完结
Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
13天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
14天前
已完结
Enhanced quality of Al 2 O 3 /SiC gate stack via microwave plasma annealing
19天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
21天前
已完结
Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress
21天前
已完结
Role of interface/border traps on the threshold voltage instability of SiC power transistors
21天前
已完结
Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
21天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
22天前
已完结