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10 积分 2025-12-11 加入
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
11天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
12天前
已完结
Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
12天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
12天前
已完结
Enhanced quality of Al 2 O 3 /SiC gate stack via microwave plasma annealing
18天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
20天前
已完结
Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress
20天前
已完结
Role of interface/border traps on the threshold voltage instability of SiC power transistors
20天前
已完结
Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
20天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
20天前
已完结