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10 积分 2025-12-11 加入
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
17天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
17天前
已完结
Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
18天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
18天前
已完结
Enhanced quality of Al 2 O 3 /SiC gate stack via microwave plasma annealing
23天前
已完结
Simulation of Threshold Voltage Instability of 4H-SiC MOSFET
25天前
已完结
Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress
25天前
已完结
Role of interface/border traps on the threshold voltage instability of SiC power transistors
26天前
已完结
Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
26天前
已完结
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests
26天前
已完结
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