Lv4
678 积分 2025-10-20 加入
Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy
5小时前
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Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
5小时前
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Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping
5小时前
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Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
5小时前
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Transition of failure mechanisms of 2D-C/SiC under on-axis and off-axis load considering temperature effects
5小时前
待确认
Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles
5小时前
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On-axis homoepitaxial growth on Si-face 4H–SiC substrates
5小时前
待确认
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
5小时前
待确认
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
5小时前
待确认
The Etching Behaviour of Dislocations in N-Doped Sic Substrate
5小时前
待确认
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