Lv51
1460 积分 2023-07-13 加入
A 0.69-Noise-Efficiency-Factor 55$\times$-Preamp-Gain Dynamic Comparator With a Stacking FIA
1天前
已完结
Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT
14天前
已完结
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
20天前
已完结
GaN HEMT for High-performance Applications: A Revolutionary Technology
21天前
已完结
Introduction to GaN Technology
21天前
已完结
Advancement of GaN HEMT Power Electronics on Diamond Substrate
21天前
已完结
A Comparative Analysis of Dissimilar High Electron Mobility Transistors and Applications
21天前
已完结
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture
22天前
已完结
5kV SiC Deep-Implanted Superjunction MOSFETs
26天前
已完结
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
1个月前
已完结
皖公网安备34019202002308
