Lv4
434 积分 2026-03-17 加入
Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance (RTH) for AlGaN/GaN HEMT
19天前
已完结
Passivation Layer Thickness-Dependent Thermal Dissipation Properties of Source-Connected Field-Plated AlGaN/GaN HEMT
19天前
已完结
Thermal Optimization of the Buffer Layer Thickness of GaN HEMTs
19天前
已完结
Hot-Electron Hardening in GaN-based Power Devices by Selective p-GaN Gate Epitaxy
19天前
已完结
p-GaN Gate HEMT with the Buffer Hole Compensation Layer for Achieving Repetitive Avalanche-Like Breakdown Capability
19天前
已完结
p-GaN Gate HEMT with the Buffer Hole Compensation Layer for Achieving Repetitive Avalanche-Like Breakdown Capability
19天前
已完结
Reliability-Aware Design Approaches for High-Performance Normally-Off GaN HEMTs
19天前
已完结
Design and Analysis of Dual AlN/SiN Passivation Layer for Mitigation of Self-heating in HEMTs
19天前
已完结
Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation
19天前
已完结
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
19天前
已完结
皖公网安备34019202002308
