Lv2
108 积分 2025-03-13 加入
Validation of 30 nm process simulation using 3D TCAD for FinFET devices
2个月前
已完结
EUV and optical lithographic pattern shift at the 5nm node
2个月前
已完结
Multi-color fly-cut-SAQP for reduced process variation
2个月前
已完结
Proceedings of the Society of Photo-Optical Instrumentation Engineers
2个月前
已完结
Performance Study of Sub-5 nm FinFET and GAA Structures at Low Temperature
2个月前
已完结
Dipole engineering at HfO2/SiO2 interface by ultra-thin Al2O3 to modulate flat-band voltage for cryogenic temperatures
3个月前
已关闭
(Invited) Energy-Efficient Cryogenic Electronics for Quantum Computing
3个月前
已关闭
Ultra-low-power cryogenic complementary metal oxide semiconductor technology
4个月前
已完结
Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts
4个月前
已关闭
Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs
6个月前
已完结
皖公网安备34019202002308
