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174 积分 2025-01-02 加入
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
11分钟前
已完结
Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method
13分钟前
已完结
Control of powder recrystallization and crystallization interface shape for 8-inch SiC crystal growth by PVT method
19分钟前
已完结
Effect of powder packing method on thermal field of SiC crystal grown by PVT method
33分钟前
已完结
The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC
27天前
已完结
The single crystal elastic constants of hexagonal SiC to 1000°C
27天前
已完结
Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4–320 K
27天前
已完结
Structural, elastic and electronic properties of 2H- and 4H-SiC
27天前
已关闭
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
2个月前
已完结
Control of powder recrystallization and crystallization interface shape for 8-inch SiC crystal growth by PVT method
2个月前
已完结
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