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130 积分 2026-04-09 加入
Distribution and evolution of defects and lattice strain induced by H+ implantation in 4H-SiC for layer transfer processes
7小时前
求助中
4H-SiC p-i-n Low-Energy X-Ray Detectors With P-Layer Formed by Al Implantation
8小时前
已完结
An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC
2天前
已完结
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