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48 积分 2026-05-14 加入
Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination
3小时前
已完结
Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure
1个月前
已关闭
Barrier height enhancement in β-Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer
1个月前
已完结
Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging Technology
1个月前
已完结