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48 积分 2026-05-14 加入
Electronic properties of extended surface defects in homoepitaxial GaN diodes
9天前
已完结
Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy
15天前
已完结
Recent progress on the effects of impurities and defects on the properties of Ga2O3
15天前
已完结
Valence-band engineering of robust p -type Ni x Ga1− x O enabling Ga2O3 p–n bipolar junction
29天前
已完结
Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination
1个月前
已完结
Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure
3个月前
已关闭
Barrier height enhancement in β-Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer
3个月前
已完结
Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging Technology
3个月前
已完结
Finite‐time command filter control for dynamic positioning of remotely operated vehicles based on disturbance observer
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