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50 积分 2023-03-08 加入
High-performance vertical β-Ga2O3 Schottky barrier diodes utilizing sputtered p-NiO double mesa junction termination extension
1个月前
已关闭
Growth of step-free surfaces on device-size (0001)SiC mesas
1个月前
已完结
Reliability of 1.5 × 1.5 mm2β‐Ga2O3 Power Diodes and Application in DC–DC Converter
2个月前
已完结
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer
3个月前
已完结
Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant
3个月前
已完结
1-kV β-Ga2O3UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel
4个月前
已完结
Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3Vertical MOSFETs via Process and Device Simulation
4个月前
已完结
Monolithic β-Ga2O3 Gate Driver Integrated Circuit
4个月前
已关闭
Surface electric field optimization in vertical trench β -Ga 2 O 3 Schottky barrier diode with MOS capacitor integration
4个月前
已完结
Over 3 kV and ultra-low leakage vertical (011) β -Ga2O3 power diodes with engineered Schottky contact and high-permittivity dielectric field plate
4个月前
已完结
Using persuasive refutation texts to prompt attitudinal and conceptual change
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