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46 积分 2025-11-03 加入
Dopant- and Trap-Limited Gate Modulation in 2D Tin Halide Perovskite Field-Effect Transistors
5天前
已关闭
Enhancing Stability and Performance in Tin‐Based Perovskite Field‐Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration
18天前
已完结
Recent advances in ferroelectric-based negative capacitances for electronic devices
24天前
已完结
Enhanced Room Temperature Carrier Mobility in 2D Halide Perovskite [(BA) 2 PbI 4 ] via Low Voltage Polymer Electrolyte Gated FET
24天前
已完结
Antisolvent-Free Crystallization-Directed Two-Dimensional/Three-Dimensional Tin Perovskites for Ambient-Tolerant Electronics
25天前
已关闭
2D Tin Halide Perovskite Semiconductors: Fundamentals, Applications, and Future Perspectives
25天前
已完结
A Study on Contact Resistance as a Function of Surface Treatment in Perovskite Field-Effect Transistors
1个月前
已完结
Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels
1个月前
已完结
Flexible optoelectronic devices based on metal halide perovskites
1个月前
已完结
Synergistic Urea/Ammonium Thiocyanate Engineering Enables Efficient and Stable Lead‐Free Tin Perovskite LEDs
2个月前
已完结
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