Lv31
224 积分 2026-02-02 加入
Ion-implantation-free trench-filled epitaxial superjunction TMBS diodes for high-voltage 4H-SiC applications
1个月前
已完结
Characterization and analysis of high-quality 4H-SiC epitaxy suitable for the super-junction adopting “multiple epitaxy-channeling implantation” route
1个月前
已完结
4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor
1个月前
已完结
Applications of chemical mechanical planarization (CMP) to More than Moore devices
1个月前
已完结
Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes
2个月前
已完结
CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology
3个月前
已完结
Control of 4H-SiC mesa profiles by a lower temperature hydrogen annealing process
4个月前
已关闭
Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures
4个月前
已关闭
Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride
4个月前
已完结
A facile synthesis of FeS/Fe3 C nanoparticles highly dispersed on in situ grown N-doped CNTs as cathode electrocatalysts for microbial fuel cells†
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