Lv21
110 积分 2024-11-29 加入
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
8天前
已完结
Reduction of morphological defects in 4H-SiC epitaxial layers
8天前
已完结
Characterization of the carrot defect in 4H-SiC epitaxial layers
8天前
已完结
Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal
2个月前
已完结
Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
3个月前
已完结
High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
3个月前
已完结
Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
3个月前
已完结
Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
3个月前
已完结
Growth of Large Diameter 4H-SiC by TSSG Technique
3个月前
已完结
Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt
3个月前
已完结
皖公网安备34019202002308
