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140 积分 2024-11-29 加入
Stacking faults in 4H–SiC epilayers and IGBTs
16天前
已完结
Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
17天前
已完结
The thermomechanical coupling in diamond/SiC composites
24天前
已完结
Ultrasonic vibration enabled cold manufacturing of high thermal conductive Cu/Diamond composites
24天前
已完结
Silicon carbide bonded diamond materials prepared by reactive infiltration with silicides
1个月前
已完结
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
1个月前
已完结
Enhancing Doping Concentration Uniformity and Batch Repeatability in 4H-SiC Homoepitaxy via Ammonia Doping
1个月前
已完结
The 4H-SiC Epitaxy Study of Ammonia Doping
1个月前
已完结
Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices
2个月前
已完结
Epitaxial trench refill of 4H-SiC by chlorinated chemistry
2个月前
已完结
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