Lv4
480 积分 2026-04-08 加入
Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates
9小时前
待确认
InP and Related Compounds
1个月前
已关闭
Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals
1个月前
已完结
Bulk crystal growth of Ga2O3
2个月前
已完结
Study on oxygen vacancies in gallium oxide nanostructures
4个月前
已完结
High contrast green luminescence from spin-coated Mo-doped β-Ga2O3 thin films
4个月前
已完结
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
4个月前
已完结
皖公网安备34019202002308
