Lv5
1270 积分 2022-11-23 加入
Surface states of pristine silica surfaces
19天前
已完结
AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy
20天前
已完结
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
1个月前
已完结
Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
1个月前
已完结
Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
1个月前
已完结
Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
1个月前
已完结
Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates
1个月前
已完结
Nitrides of Metals of the First Transition Series
2个月前
已完结
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
2个月前
已完结
Remote epitaxy
2个月前
已完结
皖公网安备34019202002308
