Lv1
42 积分 2025-12-03 加入
5 nm Gate length field-effect transistors based on monolayer α-In 2 X 3 (X = S, Se, Te)
25天前
已完结
Field-effect transistors based on an In 2 Se 3 -graphene vdW ferroelectric heterojunction for high-performance and low-power logic applications
1个月前
已完结
First-principles insights into Bi2XO5 (X = Se, Te) monolayers as high-k gate dielectrics for 2D electronics
1个月前
已关闭
Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III–V monolayers
1个月前
已完结
First-Principles Study of the Influence of (110) Strain on the Ferroelectric Trends of TiO2
1个月前
已完结
Multifunctional MoTe2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping
2个月前
已完结
Recent Advances in Unconventional Ferroelectrics and Multiferroics
2个月前
已完结
Applications of Modern Ferroelectrics
2个月前
已完结
High-Endurance (>1011cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications
3个月前
已完结
Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V
3个月前
已完结
皖公网安备34019202002308
