Lv4
514 积分 2024-06-21 加入
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT
12小时前
待确认
Experimental and numerical investigation about single-event burnout in power normally-off AlGaN/GaN HEMT
16小时前
求助中
TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
17小时前
已完结
Radiation effects and hardening strategies of GaN HEMT power devices
2天前
已完结
Total-Ionizing-Dose Radiation-Induced Leakage Current Degradation in p-GaN Gate HEMTs
2天前
已完结
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT
5天前
已完结
Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-state with Negative Gate Voltage
6天前
已关闭
Diffusivity of native defects in GaN
7天前
已完结
TCAD Simulation of the Single Event Effects in Normally-OFF GaN Transistors After Heavy Ion Radiation
8天前
已完结
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