Lv3
346 积分 2023-04-02 加入
Enhancing the quality of homoepitaxial (− 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium
5小时前
待确认
XPS analysis of gallium oxides
8小时前
已完结
Investigation of Range-energy Relationships for Low-energy Electron Beams in Silicon and Gallium Nitride
16天前
已完结
1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
22天前
已完结
Heteroepitaxial β-Ga2O3 Trench-Gate MOSFET on 4H-SiC: Trap, Thermal, and Breakdown Optimization
2个月前
已完结
The Thermal Response of Gallium Nitride HFET Devices Grown on Silicon and SiC Substrates
2个月前
已完结
First principles calculation of band offsets and defect energy levels in Al₂O₃/β-Ga₂O₃ interface structures with point defects
2个月前
已完结
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
3个月前
已完结
Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics
3个月前
已完结
Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
3个月前
已完结
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