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248 积分 2024-07-20 加入
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
9小时前
已完结
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductor
11天前
已完结
Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons
11天前
已完结
Drain current DLTS of AlGaN-GaN MIS-HEMTs
13天前
已完结
Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range
19天前
已完结
Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure
20天前
已完结
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
20天前
已完结
Temperature dependence of current-voltage characteristics in highly doped Ag/ -GaN/In Schottky diodes
30天前
已完结
Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies
30天前
已完结
Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN
30天前
已完结
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