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40 积分 2024-07-20 加入
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
13小时前
待确认
Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
13小时前
求助中
Analytical model and experimental validation of critical dependency of p‑GaN gated AlGaN/GaN enhancement‑mode high electron mobility transistor characteristics on trap-assisted tunneling
2天前
已关闭
Buffer trapping-induced R ON degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate
15天前
已完结
Interface trap of p-type gate integrated AlGaN/GaN het- erostructure field effect transistors
18天前
已完结
Technology and Reliability of Normally-Off GaN HEMTs with P-Type Gate
19天前
已完结
ON-state breakdown mechanism of GaN power HEMTs
19天前
已完结
ON-state breakdown mechanism of GaN power HEMTs
19天前
已完结
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
20天前
已完结
Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs
23天前
已完结
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