Lv1
20 积分 2024-07-20 加入
Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures
15小时前
待确认
Gate-Bias-Accelerated VTH Recovery on Schottky-Type p-GaN Gate AlGaN/GaN HEMTs
15小时前
待确认
Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
16天前
已完结
The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure
17天前
已完结
基于P-GaN栅HEMT器件的栅极稳定性及新结构的研究
22天前
已完结
p-GaN栅帽结构增强型GaN HEMT关键工艺研究
23天前
已关闭
高压GaN HEMT新结构与机理研究
23天前
已关闭
GaN基异质结功率器件新结构与关键工艺研究
23天前
已完结
Breakdown Strength Study of Barium Titanate Ceramics for Power Electronics Applications
1个月前
已完结
ON-State Gate Stress Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
1个月前
已完结
皖公网安备34019202002308
