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46 积分 2024-07-20 加入
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
39分钟前
待确认
Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices
12天前
已完结
GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
1个月前
已完结
Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
1个月前
已完结
Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices
1个月前
已完结
Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices
1个月前
已关闭
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300 mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications
1个月前
已完结
DARPA's Microscale Power Conversion Program
1个月前
已完结
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance
1个月前
已完结
Direct 48-/1-V GaN-Based DC–DC Power Converter With Double Step-Down Architecture and Master–Slave AO 2 T Control
2个月前
已完结
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