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60 积分 2025-11-26 加入
Coupling-dependent electronic structure in InSe-based lateral heterostructures
5个月前
已完结
Janus two-dimensional transition metal dichalcogenide oxides: First-principles investigation of WXO monolayers with X=S, Se, and Te
8个月前
已完结
Tunneling field-effect transistors with two-dimensional BiN as the channel semiconductor
8个月前
已完结
Symmetric high-performance transport in n - and p -type HfSnS3 nanowire gate-all-around transistors toward sub-5-nm electronics
8个月前
已完结
Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices
8个月前
已完结
Dependence of Tunneling Mechanism on Two-Dimensional Material Parameters: A High-Throughput Study
9个月前
已完结
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