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56 积分 2023-03-04 加入
Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties [ECS Transactions full paper, 109(4):249-259]
2小时前
求助中
Low Temperature Epitaxy Processes for Contact Resistivity Reduction
2小时前
求助中
Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices
2小时前
已完结
Low temperature epitaxy of tensile-strained Si:P
2小时前
已完结
Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties
2小时前
求助中
Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy
2小时前
已完结
Abnormal Silicon-Germanium (SiGe) Epitaxial Growth in FinFETs
2小时前
已完结
Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
2小时前
已完结
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers
2小时前
已完结
Epitaxial Growth of Ga-doped SiGe for Reduction of Contact Resistance in finFET Source/Drain Materials
2小时前
已完结