Lv1
36 积分 2025-07-30 加入
Unveiling the synergic potential of dual junction MoSe2/n-Ga2O3/p-GaN heterojunctions for ultra-broadband photodetection
12天前
已完结
Effect of oxygen vacancies in heteroepitaxial β-Ga2O3 thin film solar blind photodetectors
12天前
已完结
Effect of oxygen vacancies in heteroepitaxial β-Ga2O3 thin film solar blind photodetectors
12天前
已完结
High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN
12天前
已完结
Enhanced performance UV photodetectors based on the β-Ga2o3/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment
14天前
已完结
High-performance UV photodetector based on β-Ga2O3/GaN heterojunction prepared by a new route of reverse substitution growth
14天前
已完结
In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio
25天前
已完结
Tunable Ga2O3 solar-blind photosensing performance via thermal reorder engineering and energy-band modulation
1个月前
已完结
Fabrication ofβ-Ga2O3/ZnO heterojunction for solar-blind deep ultraviolet photodetection
1个月前
已完结
Electrostatic effects of self-trapped holes in β-Ga2O3 devices
1个月前
已关闭
皖公网安备34019202002308
