Lv21
150 积分 2026-03-31 加入
Realization of insulating buffer layers via MOCVD-grown, nitrogen-doped (010) β-Ga2O3
20小时前
已完结
Reduction of oxygen vacancies in Mg–N codoped Ga2O3 films for improving solar-blind UV photodetectors performance
1个月前
已完结
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers
3个月前
已完结
Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
3个月前
已完结
Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor
3个月前
已完结
2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination
3个月前
已完结
In situ nitrogen doping of β -Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study
3个月前
已完结
Nitrogen doping of metal-organic chemical vapor deposition β-Ga2O3 using nitric oxide
3个月前
已关闭
Observation of coherent ferron emission and propagation
3个月前
已完结
High-speed performance UV-C detectors based on atomic layer deposited gallium oxide thin films
3个月前
已关闭
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