Lv2
190 积分 2026-02-03 加入
Demonstration of Lightly Doped Gradient Field-Stop Layer for Improved Soft Reverse Recovery in 1200 V SiC MOSFET
3个月前
已完结
Industrial Perspective of SiC Epitaxy
3个月前
已完结
Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization
4个月前
已完结
Enhancing Doping Concentration Uniformity and Batch Repeatability in 4H-SiC Homoepitaxy via Ammonia Doping
4个月前
已完结
Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures
4个月前
已关闭
Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs
4个月前
已完结
Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode
4个月前
已完结
Influence of Substrate and EPI Buffer on SiC Bipolar Degradation for Different Voltage Classes at High Current Levels
4个月前
已完结
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
4个月前
已完结
Insights into Overcurrent-Induced Gate Breakdown and Failure Analysis of 1200 V SiC MOSFETs
5个月前
已完结
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