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90 积分 2026-02-03 加入
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
3天前
已完结
Insights into Overcurrent-Induced Gate Breakdown and Failure Analysis of 1200 V SiC MOSFETs
22天前
已完结
Identification Of Recovering Idss Failure Mode Via Novel Comprehensive Failure Analysis Technique For Mosfet Device
22天前
已完结
3.3 kV-Class 4H-SiC Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness
23天前
已完结
Analysis on BVDSS Outlier Chips and Screening Technology for 1.2 kV Automotive SiC MOSFETs
23天前
已完结
The impact of the P-pillar structure design on Breakdown Voltage for 1.2kV 4H-SiC Superjunction DMOSFET
23天前
已完结
The Minimum Specific On-Resistance of 4H-SiC Superjunction Devices
23天前
已完结
Recent developments in superjunction power devices
23天前
已完结
Development of SiC Superjunction MOSFET: A Review
24天前
已完结
Optimizing Temperature and Flow Fields of 4H-SiC Epitaxial Growth by Integrating CFD Simulation with Multi-objective Particle Swarm Optimization
2个月前
已完结
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