Lv2
128 积分 2025-05-10 加入
Pressure-Dependent Shape and Edge Configurations of MoS2 by Kinetic Monte Carlo Simulation
2个月前
已完结
Early stage nucleation mechanism for SiC(0001) surface epitaxial growth
2个月前
已关闭
Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth
2个月前
已关闭
Investigation on the effect of V-type defects on the properties of GaN crystals and the formation mechanism of surface V-type defects in GaN crystals
3个月前
已完结
Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties
3个月前
已完结
Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse
3个月前
已完结
Ultrafast response self-powered UV photodetectors based on GaS/GaN heterojunctions
10个月前
已完结
Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
11个月前
已完结
Enhanced Ultra-Narrowband Fast Response Ultraviolet Photodetector Based on Gan Homojunction with a Carbon-Doped Semi-Insulating Intermediate Layer
1年前
已完结
Recent progress in GaN-based ultraviolet photodetectors
1年前
已完结